Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions
Line 36: | Line 36: | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! | !Etch rate range | ||
| | | | ||
*A | *A | ||
Line 47: | Line 47: | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! | !Etch profile | ||
| | | | ||
* | *Isotropic | ||
* | | | ||
* | *Isotropic | ||
| | |||
*Can vary from isotropic to anisotropic (vertical sidewalls) | |||
| | | | ||
* | *Anisotropic (angles sidewalls, typical around 70 dg) | ||
|- | |- | ||
Revision as of 11:51, 12 March 2013
Feedback to this page: click here
THIS PAGE IS UNDER CONSTRUCTION
Etching of Aluminium
Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.
Comparison methode 1 and methode 2 for the process
Al wet etch 1 | Al wet etch 2 | Al etch by ICP metal | Al sputtering by IBE (Ionfab300+) | |
---|---|---|---|---|
Generel description | Wet etch of pure Al | Wet etch of Al + 1.5% Si | Dry plasma etch of Al | Sputtering of Al - pure physical etch |
Etch rate range |
|
| ||
Etch profile |
|
|
|
|
Substrate size |
|
| ||
Allowed materials |
|
|