Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions

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!Parameter 1
!Etch rate range
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*A
*A
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!Parameter 2
!Etch profile
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*A
*Isotropic
*B
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*C
*Isotropic
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*Can vary from isotropic to anisotropic (vertical sidewalls)
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*A
*Anisotropic (angles sidewalls, typical around 70 dg)
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Revision as of 11:51, 12 March 2013

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Etching of Aluminium

Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.


Comparison methode 1 and methode 2 for the process

Al wet etch 1 Al wet etch 2 Al etch by ICP metal Al sputtering by IBE (Ionfab300+)
Generel description Wet etch of pure Al Wet etch of Al + 1.5% Si Dry plasma etch of Al Sputtering of Al - pure physical etch
Etch rate range
  • A
  • B
  • A
  • B
Etch profile
  • Isotropic
  • Isotropic
  • Can vary from isotropic to anisotropic (vertical sidewalls)
  • Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3