Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions
No edit summary |
|||
Line 28: | Line 28: | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Generel description | !Generel description | ||
| | |Wet etch of pure Al | ||
| | |Wet etch of Al + 1.5% Si | ||
|Dry plasma etch of Al | |||
|Sputtering of Al - pure physical etch | |||
|- | |- | ||
Revision as of 11:46, 12 March 2013
Feedback to this page: click here
THIS PAGE IS UNDER CONSTRUCTION
Etching of Aluminium
Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.
Comparison methode 1 and methode 2 for the process
Al wet etch 1 | Al wet etch 2 | Al etch by ICP metal | Al sputtering by IBE (Ionfab300+) | |
---|---|---|---|---|
Generel description | Wet etch of pure Al | Wet etch of Al + 1.5% Si | Dry plasma etch of Al | Sputtering of Al - pure physical etch |
Parameter 1 |
|
| ||
Parameter 2 |
|
| ||
Substrate size |
|
| ||
Allowed materials |
|
|