Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions

From LabAdviser
BGE (talk | contribs)
No edit summary
BGE (talk | contribs)
Line 28: Line 28:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|Generel description - methode 1
|Wet etch of pure Al
|Generel description - methode 2
|Wet etch of Al + 1.5% Si
|Dry plasma etch of Al
|Sputtering of Al - pure physical etch
|-
|-



Revision as of 11:46, 12 March 2013

Feedback to this page: click here

THIS PAGE IS UNDER CONSTRUCTION

Etching of Aluminium

Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.


Comparison methode 1 and methode 2 for the process

Al wet etch 1 Al wet etch 2 Al etch by ICP metal Al sputtering by IBE (Ionfab300+)
Generel description Wet etch of pure Al Wet etch of Al + 1.5% Si Dry plasma etch of Al Sputtering of Al - pure physical etch
Parameter 1
  • A
  • B
  • A
  • B
Parameter 2
  • A
  • B
  • C
  • A
Substrate size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3