Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions

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*[[Specific Process Knowledge/Etch/Wet Aluminium Etch|Etching of Al by wet etch]]
*[[Specific Process Knowledge/Etch/Wet Aluminium Etch|Etching of Al by wet etch]]
*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/Aluminium|Etching of Al by dry etch]]
*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/Aluminium|Etching of Al by dry etch]]
*[[/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
*[[/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300|Sputtering of Al]]
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Revision as of 09:52, 12 March 2013

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Etching of Aluminium

Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.


Comparison methode 1 and methode 2 for the process

Methode 1 Methode 2
Generel description Generel description - methode 1 Generel description - methode 2
Parameter 1
  • A
  • B
  • A
  • B
Parameter 2
  • A
  • B
  • C
  • A
Substrate size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3