Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions

From LabAdviser
Kn (talk | contribs)
No edit summary
Kn (talk | contribs)
Line 37: Line 37:
|10Å to 0.5µm  
|10Å to 0.5µm  
|
|
10Å to 0.5µm
10Å to 1µm


|-
|-
Line 48: Line 48:
|-
|-
|}
|}


== Studies of Cu deposition processes ==
== Studies of Cu deposition processes ==

Revision as of 12:34, 1 March 2013

Feedback to this page: click here

Deposition of Cu

Copper can be deposited by e-beam evaporation or sputtering . In the chart below you can compare the different deposition equipment.


E-beam evaporation (Alcatel) Sputter deposition (PVD co-sputter/evaporation)
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • 4x6" wafers or
  • 4x4" wafers or
  • 4x2" wafers
Pre-clean RF Ar clean RF Ar clean
Layer thickness 10Å to 0.5µm

10Å to 1µm

Deposition rate 2Å/s to 15Å/s

Depending on process parameters

Studies of Cu deposition processes

Roughness of Cu layers - Roughness of Cu layers deposited with Alcatel


Cu sputtering in (PVD co-sputter/evaporation)

Process parameters are listed here: Cu sputter in PVD co-sputter/evaporation