Specific Process Knowledge/Thin film deposition/Deposition of Aluminium: Difference between revisions

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 Aluminium can be deposited by e-beam evaporation, by sputter and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
+{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
+|-
+|-
+|-style="background:silver; color:black"
+!
+![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|LPCVD]]
+![[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]]
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+!Generel description
+|Low Pressure Chemical Vapour Deposition (LPCVD furnace process)
+|Plasma Enhanced Chemical Vapour Deposition (PECVD process)
+|-
+|-
+|-style="background:LightGrey; color:black"
+!Stoichiometry
+|
+*Si<sub>3</sub>N<sub>4</sub>
+*SRN (only 4" nitride furnace)
+Si<sub>3</sub>N<sub>4</sub>: Stoichiometric nitride
+SRN: Silicon rich (low stress) nitride
+|
+*Si<sub>x</sub>N<sub>y</sub>H<sub>z</sub>
+*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub>
+Silicon nitride can be doped with boron, phosphorus or germanium
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+!Film thickness
+|
+*Si<sub>3</sub>N<sub>4</sub>: ~50 Å - ~1400 Å
+*SRN: ~50 Å - ~2800 Å
+Thicker nitride layers can be deposited over more runs
+|
+*~40 nm - 10 µm
+|-
+|-
+|-style="background:LightGrey; color:black"
+!Process temperature
+|
+*780 <sup>o</sup>C - 845 <sup>o</sup>C
+|
+*300 <sup>o</sup>C
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+!Step coverage
+|
+*Good
+|
+*Less good
+|-
+|-
+|-style="background:LightGrey; color:black"
+!Film quality
+|
+*Deposition on both sides og the substrate
+*Dense film
+*Few defects
+|
+*Deposition on one side of the substrate
+*Less dense film
+*Incorporation of hydrogen in the film
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+!KOH etch rate (80 <sup>o</sup>C)
+|
+*Expected <1 Å/min
+|
+*Dependent on recipe: ~1-10 Å/min
+|-
+|-
+|-style="background:LightGrey; color:black"
+!BHF etch rate
+|
+*Very low
+|
+*Very high compared the LPCVD nitride
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+!Batch size
+|
+*1-25 100 mm wafers
+*1-25 150 mm wafers (only 6" furnace)
+Depending on what furnace you use
+|
+*Several smaller samples
+*1-several 50 mm wafers
+*1-3 100 mm wafers
+*1 150 mm wafer
+Depending on what PECVD you use
+|-
+|-
+|-style="background:LightGrey; color:black"
+!'''Allowed materials'''
+|
+*Silicon
+*Silicon oxide
+*Silicon nitride
+*Pure quartz (fused silica)
+Processed wafers have to be RCA cleaned
+|
+*Silicon
+*Silicon oxide (with boron, phosphorous and germanium)
+*Silicon nitrides (with boron, phosphorous and germanium)
+*Pure quartz (fused silica)
+|-
+|}
+<br clear="all" />
 {| border="1" cellspacing="0" cellpadding="6"