Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
No edit summary |
No edit summary |
||
| Line 7: | Line 7: | ||
<br clear="all" /> | <br clear="all" /> | ||
{| border="1" cellspacing="0" cellpadding="3" | ==Process Knowledge== | ||
{| border="1" cellspacing="0" cellpadding="3" align="right" | |||
! | ! | ||
! LPCVD | ! LPCVD | ||
| Line 21: | Line 24: | ||
*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | *Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | ||
*SRN: ~50Å - ~10000Å | *SRN: ~50Å - ~10000Å | ||
|- | |- | ||
|Step coverage | |Step coverage | ||
| Line 34: | Line 33: | ||
*Dense film | *Dense film | ||
*Few defects | *Few defects | ||
|- | |||
|Process Temperature | |||
| | |||
*800-835 <sup>o</sup>C | |||
|- | |- | ||
|Batch size | |Batch size | ||
| Line 48: | Line 51: | ||
|} | |} | ||
Please take a look at the process side for deposition of Silicon Nitride using LPCVD: | Please take a look at the process side for deposition of Silicon Nitride using LPCVD: | ||
[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using LPCVD|Deposition of Silicon Nitride using LPCVD]] | [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using LPCVD|Deposition of Silicon Nitride using LPCVD]] | ||
To the right you see a rough overview of the performance of LPCVD Silicon Nitride and some process related parameters. | |||