Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace

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Boron Drive-in furnace (A1)

A1 Bor Drive-in furnace. Positioned in cleanroom 2

The Boron Drive-in furnane (A1) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a pre-deposition and oxidation of the boron phase layer. Boron pre-deposition takes place in the Boron Predep furnace (A2). The Boron Drive-in furnace can also be used for drive-in of boron which has been ion implanted.

The Boron Drive-in furnace is the top furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with the Gate Oxide furnace (C1) are the cleanest of all furnaces in the cleanroom. Please be aware of which substrates that are allowed to enter this furnace. Check the cross contamination chart.

The user manual, technical information and contact information can be found in LabManager:

Boron Drive-in furnace (A1)

Process knowledge

• Boron drive-in: look at the Dope with Boron page
• Oxidation: look at the Oxidation page
• Annealing: look at the Annealing page

Overview of the performance of the boron drive-in furnace and some process related parameters

Purpose	Drive-in of boron Oxidation of silicon Oxidation of boron phase layer Annealing of the oxide	Oxidation: Dry Wet: with torch (H2+O2)
Performance	Film thickness	Dry SiO2: 50 Å to ~2000 Å (takes too long to make it thicker) Wet SiO2: 50 Å to ~3 µm (takes too long to make it thicker)
Process parameter range	Process Temperature	800-1150 oC
	Process pressure	1 atm
	Gasses on the system	O2, H2 and N2
Substrates	Batch size	1-30 4" wafer (or 2" wafers) per run
	Substrate material allowed	Silicon wafers (new or RCA cleaned wafers) From A2 furnace directly (e.g. incl. Predep HF)