Specific Process Knowledge/Etch/RIE (Reactive Ion Etch): Difference between revisions
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[[image:Cluster1a.jpg|200x200px|right|thumb|RIE1 (part of Cluster1) - positioned in cleanroom2]] | [[image:Cluster1a.jpg|200x200px|right|thumb|RIE1 (part of Cluster1) - positioned in cleanroom2]] | ||
[[image:Cluster2x.jpg|200x200px|right|thumb|RIE2 (part of Cluster2)- positioned in cleanroom3]] | [[image:Cluster2x.jpg|200x200px|right|thumb|RIE2 (part of Cluster2)- positioned in cleanroom3]] | ||
At Danchip we have three RIE's. Two (RIE1 and RIE2) for etching silicon based materials, resist and polymers (mainly RIE2) and one (III-V RIE) for etching III-V materials. Here only RIE1 and RIE2 will be described. | At Danchip we have three RIE's. Two (RIE1(will soon be decommisioned) and RIE2) for etching silicon based materials, resist and polymers (mainly RIE2) and one (III-V RIE) for etching III-V materials. Here only RIE1 and RIE2 will be described. | ||
The hardware of RIE1 and RIE2 is very similar, but you cannot count on that identical recipes on RIE1 and RIE2 perform exactly the same. In addition to that the main difference between RIE1 and RIE2 is the cleanness of the two equipment. In rough terms RIE1 is the clean system and the RIE2 is the dirty system. This means that in RIE2 opposed to RIE1 it is allowed to have small amounts of metals exposed to the plasma. | The hardware of RIE1 and RIE2 is very similar, but you cannot count on that identical recipes on RIE1 and RIE2 perform exactly the same. In addition to that the main difference between RIE1 and RIE2 is the cleanness of the two equipment. In rough terms RIE1 is the clean system and the RIE2 is the dirty system. This means that in RIE2 opposed to RIE1 it is allowed to have small amounts of metals exposed to the plasma. | ||