Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
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==Wet Silicon Oxide Etch (BHF and SIO Etch (wetting agent))== | ==Wet Silicon Oxide Etch (BHF and SIO Etch (wetting agent))== | ||
[[Image:BHF_RR3.jpg|300x300px|thumb|Wet Silicon Oxide Etch (BHF): positioned in cleanroom 3]] | [[Image:BHF_RR3.jpg|300x300px|thumb|Wet Silicon Oxide Etch (BHF): positioned in cleanroom 3]] | ||
[[Image:BHF_wetting.jpg|300x300px|thumb|SIO etch (BHF with wetting agent): positioned in cleanroom 4]] | |||
[[Image:KOH_4tommer.jpg|225x225px|thumb|BHF between the KOH baths: positioned in cleanroom 3. This is primarily used to remove oxide before and after a KOH etch]] | |||
[[Image:Fumehoodetch-chrom2.jpg|225x225px|thumb|PP-bath: positioned in fume hood in cleanromm 2]] | |||
Silicon oxide can be etched using HF. At Danchip it is mainly used in a buffered version BHF (premixed). The BHF has a more stable etch rate and is more gentle to photoresist due to an almost pH neutral solution which makes photoresist a good masking material for the oxide etch. | Silicon oxide can be etched using HF. At Danchip it is mainly used in a buffered version BHF (premixed). The BHF has a more stable etch rate and is more gentle to photoresist due to an almost pH neutral solution which makes photoresist a good masking material for the oxide etch. | ||
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===Silicon oxide etch data=== | ===Silicon oxide etch data=== | ||
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*Photoresist | *Photoresist | ||
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==Life time of the photoresist and blue film in BHF== | ==Life time of the photoresist and blue film in BHF== | ||