Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions

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 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*<nowiki>#</nowiki> small samples
+*<nowiki>#</nowiki> small samples on carriers
-*<nowiki>#</nowiki> 50 mm wafers
+*<nowiki>#</nowiki> 50 mm wafers: Bonded to carriers
-*<nowiki>#</nowiki> 100 mm wafers
+*<nowiki>#</nowiki> 100 mm wafers: Up to 18 wafers in a batch process
-*<nowiki>#</nowiki> 150 mm wafers
+*<nowiki>#</nowiki> 150 mm wafers: 1 wafer
 |-
 | style="background:LightGrey; color:black"|Allowed materials
 |style="background:WhiteSmoke; color:black"|
-*Allowed material 1
+* Silicon wafers
-*Allowed material 2
+* Quartz wafers need a (semi)conducting layer for clamping
 |-
+| style="background:LightGrey; color:black"|Possible masking materials
+|style="background:WhiteSmoke; color:black"|
+* AZ photoresist
+* zep resist
+* DUV stepper resist (barc + krf)
+* Oxides and nitrides
+* Aluminium (only very mild processes such as process C and nanoetches)
 |}