Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions
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End point detection is achieved by SIMS, and the etch rate is approximately 25 Nm/min. | End point detection is achieved by SIMS, and the etch rate is approximately 25 Nm/min. | ||
Resist stripping can be hard due to burned resist, to remedy this try to lower the current. Changing the currect will chance the sidewall angle and new studies of etch profiles will be necessary. For help, discussion and further info please contact [mailto:kristian.rasmussen@nanotech.dtu.dk Kristian Hagsted Rasmussen]. | |||
===Problems with resists stripping af etching=== | |||
Resist stripping after the etch can be hard due to burned resist, to remedy this try to lower the current. Changing the currect will chance the sidewall angle and new studies of etch profiles will be necessary. For help, discussion and further info please contact [mailto:kristian.rasmussen@nanotech.dtu.dk Kristian Hagsted Rasmussen]. | |||
===Design of Experiment results=== | ===Design of Experiment results=== | ||