Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Si etch: Difference between revisions
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[[image:Silicon-IBE-good-b17.jpg|300x300px|thumb|center|Silicon etch in IBE with good corner definition. Small hare ears are obvious at the structure edge.]] | [[image:Silicon-IBE-good-b17.jpg|300x300px|thumb|center|Silicon etch in IBE with good corner definition. Small hare ears are obvious at the structure edge. Substrate etched with Beam current=400mA, Beam voltage=600V, Beam acceleration Voltage=400V, and Stage angle=5°]] | ||
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[[image:Silicon-IBE-bad-b21.jpg|300x300px|thumb|center|Silicon etch in IBE with rounded corners. Large hare ears with ripling are seen at the structure edge.]] | [[image:Silicon-IBE-bad-b21.jpg|300x300px|thumb|center|Silicon etch in IBE with rounded corners. Large hare ears with ripling are seen at the structure edge. Substrate etched with Beam current=500mA, Beam voltage=500V, Beam acceleration Voltage=500V, and Stage angle=10°]] | ||
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===Contour plots of etch rate and corner angle=== | ===Contour plots of etch rate and corner angle=== | ||