Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
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|Deposition rate [Å/min] | |Deposition rate [Å/min] | ||
|RI | |RI | ||
|Uniformity [%] | |Uniformity [%]<br \>[Std./mean] | ||
|Stress [MPa] | |Stress [MPa] | ||
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|~117 | |~117 | ||
|~1.99 | |~1.99 | ||
| | |~4 | ||
|~-30 | |~-30 | ||
|- | |- | ||
Revision as of 12:03, 25 February 2008
At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride
Recipes
| Recipe name | SiH4 flow [sccm] | NH3 flow [sccm] | N2 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| 1nitride |
Expected results
| Recipe name | Deposition rate [nm/min] | RI | Uniformity [%] | Stress [MPa] |
| 1nitride | ~32 | 1.89 | 0.4 |
Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride
Recipes
| Recipe name | SiH4 flow [sccm] | NH3 flow [sccm] | N2 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| MFSiNLS | 30 | 30 | 1470 | 650 | 20HF 6s
20LF 2s |
Low stress nitride - standard recipe |
| LFSiN | 30 | 15 | 1470 | 550 | 60LF | Compressive stress |
| HFSiN | 30 | 42 | 1470 | 900 | 20HF | Tensile stress |
LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress
Expected results
| Recipe name | Deposition rate [Å/min] | RI | Uniformity [%] [Std./mean] |
Stress [MPa] |
| MFSiNLS | ~117 | ~1.99 | ~4 | ~-30 |
| LFSiN | ~550 | ~1.96 | ~3 | ~-630 |
| HFSiN | ~130 | ~1.97 | ~2 | ~460 |