Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions
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*[[/Si etch using RIE1 or RIE2|Dry etch using RIE1 or RIE2]] | *[[/Si etch using RIE1 or RIE2|Dry etch using RIE1 or RIE2]] | ||
*[[/Si etch using ASE|Dry etch using ASE]] | *[[/Si etch using ASE|Dry etch using ASE]] | ||
==Comparison of KOH etch, wet PolySilicon etch, RIE etch and ASE etch for etching of Silicon== | ==Comparison of KOH etch, wet PolySilicon etch, RIE etch and ASE etch for etching of Silicon== |
Revision as of 09:38, 28 November 2007
Etch of silicon can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:
Wet etches:
Dry etches:
Comparison of KOH etch, wet PolySilicon etch, RIE etch and ASE etch for etching of Silicon
KOH | PolySilicon etch | RIE | ASE | |
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What is it good for: |
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Possible masking materials: |
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Etch rate |
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<40nm/min to >600nm/min depending on recipe parameters and mask design | <130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio. |
Size of substrate |
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4" in our standard bath | 4" (or smaller with carrier) | 6" (when it is set up for 6") and 4" (or smaller if you have a carrier) |
Batch size |
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25 wafers at a time | One wafer at a time | One wafer at a time |
Allowed materials |
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