Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions
Appearance
| Line 197: | Line 197: | ||
*As RIE but better for high aspect ratio etching and deep etches (higher etch rate) | *As RIE but better for high aspect ratio etching and deep etches (higher etch rate) | ||
*Good selectivity to photoresist | *Good selectivity to photoresist | ||
*The ASE is dedicated to polymer etch, which can affect the Si etch stability. | |||
| | | | ||
* | *This is dedicated to metal etch | ||
| | | | ||
*Primarily for pure physical etch by sputtering with Ar-ions | *Primarily for pure physical etch by sputtering with Ar-ions | ||