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Specific Process Knowledge/Characterization/Sample imaging: Difference between revisions

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![[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy|SEM]]
![[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy|SEM]]
![[Specific_Process_Knowledge/Characterization/AFM:_Atomic_Force_Microscopy|AFM]]
![[Specific_Process_Knowledge/Characterization/AFM:_Atomic_Force_Microscopy|AFM]]
![[Specific_Process_Knowledge/Characterization/Profiler#Dektak_XTA_new_stylus_profiler|Stylus profiler (Detkak)]]
![[Specific_Process_Knowledge/Characterization/Profiler#Dektak_XTA_new_stylus_profiler|Stylus profiler (Dektak)]]
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|1-20 nm
|1-20 nm
:depends on what SEM you use
depends on what SEM you use
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|Electrons
|Electrons
|Forces
|Forces
|Contacts
|Contact
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:(not possible to inspect entire wafer in JEOL SEM)
:(not possible to inspect entire wafer in JEOL SEM)
*One 150 mm wafer  
*One 150 mm wafer  
:only Zeiss, LEO and FEI SEM, not possible to inspect entire wafer)
:(only Zeiss, LEO and FEI, not possible to inspect entire wafer)
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*One small sample
*One small sample