Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions
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image:C01549.02-A.jpg|Wafer C01549.02: 10 % exposed area | image:C01549.02-A.jpg|Wafer C01549.02: 10 % exposed area | ||
image:C01549.03.jpg|Wafer C01549.03: 20 % exposed area | image:C01549.03.jpg|Wafer C01549.03: 20 % exposed area | ||
image: | image:C01549.04-A.jpg|Wafer C01549.04: 35 % exposed area | ||
image: | image:C01549.04-B.jpg|Wafer C01549.05: 35 % exposed area (close-up) | ||
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