Jump to content

Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions

BGE (talk | contribs)
BGE (talk | contribs)
Line 203: Line 203:
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Pattern size range
!Possible masking materials
|
|
*~1µm and up
*Silicon Nitride
*Silicon Oxide
|
|
*~200nm and up
*Photoresist
|
|
*~10nm and up
*Photoresist
*E-beam resist
*Silicon Oxide
*Silicon Nitride
*Aluminium
*Chromium (ONLY RIE2!)
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
|
|
*~20nm and up
*Photoresist and zep resist
*Silicon Oxide
*Silicon Nitride
*Aluminium oxide
|
|
*3D ?nm
*Photoresist
*Silicon Oxide
*Silicon Nitride
*Aluminium
|
*Photo-, DUV- and e-beamresist
*Silicon Oxide
*Silicon Nitride
*Aluminium
*Cr
*Ti
|
*Any material that is accepted in the machine
|-
|-