Jump to content

Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions

BGE (talk | contribs)
BGE (talk | contribs)
Line 190: Line 190:
*Can etch isotropic and anisotropic depending on the process parameters
*Can etch isotropic and anisotropic depending on the process parameters
|
|
*State-of-the-art dry silicon etcher with atmospheric cassette loader
*Extremely high etch rate and advanced processing options
|
|
*As RIE but better for high aspect ratio etching and deep etches (higher etch rate)
*As RIE but better for high aspect ratio etching and deep etches (higher etch rate)
*Good selectivity to photoresist
*Good selectivity to photoresist
 
|
*
|
*Primarily for pure physical etch by sputtering with Ar-ions
|-
|-