Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions
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=== Experiment === | === Experiment === | ||
A number of wafers are patterned with the [[Specific Process Knowledge/Photolithography/masks/travka|travka masks]] in AZ photoresist or 600 nm oxide. The wafers are then etched using two different durations of process A in the DRIE-Pegasus. | A number of wafers are patterned with the [[Specific Process Knowledge/Photolithography/masks/travka|travka masks]] in AZ photoresist or 600 nm oxide. The wafers are then etched (batch recipe with 5 minute TDESC interstep cleans) using two different durations of process A in the DRIE-Pegasus. | ||
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