Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions
| Line 116: | Line 116: | ||
! width="70" |Wafer number | ! width="70" |Wafer number | ||
! width="70" |Mask | ! width="70" |Mask | ||
! width="70" |Mask material | |||
! Process A duration | ! Process A duration | ||
|- | |- | ||
| C01548.01 | | C01548.01 | ||
| Travka 05 | | Travka 05 | ||
| AZ photoresist | |||
| 55 cycles, 10:05 mins | | 55 cycles, 10:05 mins | ||
|- | |- | ||
| C01548.02 | | C01548.02 | ||
| Travka 10 | | Travka 10 | ||
| AZ photoresist | |||
| 55 cycles, 10:05 mins | | 55 cycles, 10:05 mins | ||
|- | |- | ||
| C01548.03 | | C01548.03 | ||
| Travka 20 | | Travka 20 | ||
| AZ photoresist | |||
| 55 cycles, 10:05 mins | | 55 cycles, 10:05 mins | ||
|- | |- | ||
| C01548.04 | | C01548.04 | ||
| Travka 35 | | Travka 35 | ||
| AZ photoresist | |||
| 55 cycles, 10:05 mins | | 55 cycles, 10:05 mins | ||
|- | |- | ||
| C01548.05 | | C01548.05 | ||
| Travka 50 | | Travka 50 | ||
| AZ photoresist | |||
| 55 cycles, 10:05 mins | | 55 cycles, 10:05 mins | ||
|} | |} | ||
| Line 148: | Line 154: | ||
| C01549.01 | | C01549.01 | ||
| Travka 05 | | Travka 05 | ||
| 600 nm oxide | |||
| 110 cycles, 20:10 mins | | 110 cycles, 20:10 mins | ||
|- | |- | ||
| C01549.02 | | C01549.02 | ||
| Travka 10 | | Travka 10 | ||
| 600 nm oxide | |||
| 110 cycles, 20:10 mins | | 110 cycles, 20:10 mins | ||
|- | |- | ||
| C01549.03 | | C01549.03 | ||
| Travka 20 | | Travka 20 | ||
| 600 nm oxide | |||
| 110 cycles, 20:10 mins | | 110 cycles, 20:10 mins | ||
|- | |- | ||
| C01549.04 | | C01549.04 | ||
| Travka 35 | | Travka 35 | ||
| 600 nm oxide | |||
| 110 cycles, 20:10 mins | | 110 cycles, 20:10 mins | ||
|} | |} | ||
|} | |} | ||
Revision as of 10:54, 4 February 2013
Process A
Process A is labelled Large trench (80μm wide) 150μm depth. In the acceptance test the process was run on a 150 mm SPTS wafer with 12-13 % etch load.
| Parameter | Specification | Average result |
|---|---|---|
| Etch rate (µm/min) | > 15 | 18.9 |
| Etched depth (µm) | 150 | 189.1 |
| Scallop size (nm) | < 800 | 718 |
| Profile (degs) | 91 +/- 1 | 91.1 |
| Selectivity to AZ photoresist | > 150 | 310 |
| Undercut (µm) | <1.5 | 0.84 |
| Uniformity (%) | < 3.5 | 3.0 |
| Repeatability (%) | <4 | 0.43 |
The process developed by SPTS that fulfilled these criteria had the following parameters:
| Step 1 | Step 2 | |||
|---|---|---|---|---|
| Parameter | Etch | Dep | Etch | Dep |
| Gas flow (sccm) | SF6 350 (1.5 s) 550 | C4F8 200 | SF6 350 (1.5 s) 550 | C4F8 200 |
| Cycle time (secs) | 7.0 | 4.0 | 7.0 | 4.0 |
| Pressure (mtorr) | 25 (1.5 s) 90 >> 150 | 25 | 25 (1.5 s) 150 | 25 |
| Coil power (W) | 2800 | 2000 | 2800 | 2000 |
| Platen power (W) | 120 >> 140 (1.5) 45 | 0 | 140 (1.5) 45 | 0 |
| Cycles | 11 (keep fixed) | 44 (vary this) | ||
| Common | Temperature 20 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers | |||
Process A performance
The perfomance of Process A has been investigated as a function of feature size and etch load.
Experiment
A number of wafers are patterned with the travka masks in AZ photoresist or 600 nm oxide. The wafers are then etched using two different durations of process A in the DRIE-Pegasus.
|
|