Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions

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 The perfomance of Process A has been investigated as a function of feature size and etch load.
+=== Experiment ===
+A number of wafers are patterned with the [[Specific Process Knowledge/Photolithography/masks/travka|travka masks]] in AZ photoresist or 600 nm oxide. The wafers are then etched using two different durations of process A in the DRIE-Pegasus.
+{|
+| STYLE="vertical-align: top"|
+{| border = 1
+|+ '''Wafers'''
+|-
+! width="70" |Wafer number
+! width="70" |Mask
+! Process A duration
+|-
+| C01548.01
+| Travka 05
+| 55 cycles, 10:05 mins
+|-
+| C01548.02
+| Travka 10
+| 55 cycles, 10:05 mins
+|-
+| C01548.03
+| Travka 20
+| 55 cycles, 10:05 mins
+|-
+| C01548.04
+| Travka 35
+| 55 cycles, 10:05 mins
+|-
+| C01548.05
+| Travka 50
+| 55 cycles, 10:05 mins
+|}
+| STYLE="vertical-align: top"|
+{| border = 1
+|+ '''Wafers'''
+|-
+! width="70" |Wafer number
+! width="70" |Mask
+! Process A duration
+|-
+| C01549.01
+| Travka 05
+| 110 cycles, 20:10 mins
+|-
+| C01549.02
+| Travka 10
+| 110 cycles, 20:10 mins
+|-
+| C01549.03
+| Travka 20
+| 110 cycles, 20:10 mins
+|-
+| C01549.04
+| Travka 35
+| 110 cycles, 20:10 mins
+|}
+|}