Specific Process Knowledge/Characterization/Sample imaging: Difference between revisions

@@ Line 53: / Line 53: @@
 |-
 |-style="background:LightGrey; color:black"
-!Stoichiometry
+!xxx
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 *Si<sub>3</sub>N<sub>4</sub>
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 !Batch size
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-*1-25 100 mm wafers
+*Several small samples
-*1-25 150 mm wafers (only 6" furnace)
+*One 50 mm wafer
-Depending on what furnace you use
+*One 100 mm wafer
+*One 150 mm wafer
+Stage size depends on what microscope you use
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-*Several smaller samples
+*Several small samples
-*1-several 50 mm wafers
+*One 50 mm wafer
-*1-3 100 mm wafers
+*One 100 mm wafer
-*1 150 mm wafer
+*One 150 mm wafer
-Depending on what PECVD you use
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+*Several small samples
+*One 50 mm wafer
+*One 100 mm wafer (not possible to inspect entire wafer in JEOL SEM)
+*One 150 mm wafer (Only Zeiss, LEO and FEI SEM, not possible to inspect entire wafer)
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+*One small sample
+*One 50 mm wafer
+*One 100 mm wafer
+*One 150 mm wafer
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+*One small sample
+*One 50 mm wafer
+*One 100 mm wafer
+*One 150 mm wafer
 |-
@@ Line 169: / Line 182: @@
 !'''Allowed materials'''
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-*Silicon
+*Silicon,silion oxide, silicon nitride
+*Quartz, polymers and photoresist
-*Silicon
+*Metals
-*Silicon oxide (with boron, phosphorous and germanium)
-*Silicon nitrides (with boron, phosphorous and germanium)
-*Pure quartz (fused silica)
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