Specific Process Knowledge/Thermal Process: Difference between revisions
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== Choose a process type == | == Choose a process type == | ||
*Oxidation - grow an oxide | *[[Oxidation]] - ''grow an oxide'' | ||
*Annealing | *[[Annealing]] | ||
*Dope with | *[[Dope with Boron]] | ||
*Dope with | *[[Dope with Phosphorus]] | ||
== Choose an equipment to use == | == Choose an equipment to use == | ||
*A1 Furnace Boron drive-in - ''For oxidation of new wafers and for drive in of Boron pre-dep'' | *[[A1 Furnace Boron drive-in]] - ''For oxidation of new wafers and for drive in of Boron pre-dep'' | ||
*A2 Furnace Boron pre-dep - ''Dope with Boron: For predeposition of Boron on wafers'' | *[[A2 Furnace Boron pre-dep]] - ''Dope with Boron: For predeposition of Boron on wafers'' | ||
*A3 Furnace Phosphorus drive-in - ''For oxidation of new wafers and for drive in of Phosphorus pre-dep'' | *[[A3 Furnace Phosphorus drive-in]] - ''For oxidation of new wafers and for drive in of Phosphorus pre-dep'' | ||
*A4 Furnace Phosphorus pre-dep - ''Dope with Phosphorus: For predeposition of Phosphorus on wafers'' | *[[A4 Furnace Phosphorus pre-dep]] - ''Dope with Phosphorus: For predeposition of Phosphorus on wafers'' | ||
*C1 Furnace Gate | *[[C1 Furnace Gate Oxide]] - ''For growing of Gate Oxide on new wafers'' | ||
*C2 Furnace Anneal | *[[C2 Furnace Anneal Oxide]] - ''For oxidation and annealing'' | ||
*C3 Furnace Anneal | *[[C3 Furnace Anneal Bond]] - ''For annealing of bonded wafers and?? '' | ||
*C4 Furnace Aluminium | *[[C4 Furnace Aluminium Anneal]] - ''For oxidation and annealing of wafers containing Aluminium'' | ||
*Furnace Noble - ''For non-clean annealing'' | *[[Furnace Noble]] - ''For non-clean annealing'' | ||
*Furnace Dry oxide - ''For oxidation of 2" wafers'' | *[[Furnace Dry oxide]] - ''For oxidation of 2" wafers'' | ||
*Furnace APOX - ''Furnace for growing very thick oxide'' | *[[Furnace APOX]] - ''Furnace for growing very thick oxide'' | ||
*Jipelec RTP - ''For Rapid Thermal Anneal of III-V materials and Silicon based material'' | *[[Jipelec RTP]] - ''For Rapid Thermal Anneal of III-V materials and Silicon based material'' | ||
Revision as of 10:30, 11 October 2007
Choose a process type
- Oxidation - grow an oxide
- Annealing
- Dope with Boron
- Dope with Phosphorus
Choose an equipment to use
- A1 Furnace Boron drive-in - For oxidation of new wafers and for drive in of Boron pre-dep
- A2 Furnace Boron pre-dep - Dope with Boron: For predeposition of Boron on wafers
- A3 Furnace Phosphorus drive-in - For oxidation of new wafers and for drive in of Phosphorus pre-dep
- A4 Furnace Phosphorus pre-dep - Dope with Phosphorus: For predeposition of Phosphorus on wafers
- C1 Furnace Gate Oxide - For growing of Gate Oxide on new wafers
- C2 Furnace Anneal Oxide - For oxidation and annealing
- C3 Furnace Anneal Bond - For annealing of bonded wafers and??
- C4 Furnace Aluminium Anneal - For oxidation and annealing of wafers containing Aluminium
- Furnace Noble - For non-clean annealing
- Furnace Dry oxide - For oxidation of 2" wafers
- Furnace APOX - Furnace for growing very thick oxide
- Jipelec RTP - For Rapid Thermal Anneal of III-V materials and Silicon based material