Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions

Revision as of 15:10, 25 January 2013 view source Pvl (talk \| contribs) Bureaucrats, danchip, Administrators 516 edits →Comparison of LPCVD and PECVD for silicon nitride deposition ← Older edit		Revision as of 12:06, 28 January 2013 view source Pvl (talk \| contribs) Bureaucrats, danchip, Administrators 516 edits No edit summary Newer edit →
Line 1:		Line 1:
			'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride&action=submit click here]'''


	Deposition of Silicon Nitride can be done with either LPCVD (Low Pressure Chemical Vapor Deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition).		Deposition of Silicon Nitride can be done with either LPCVD (Low Pressure Chemical Vapor Deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition).