Specific Process Knowledge/Etch/DRIE-Pegasus/processB: Difference between revisions
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After etching each wafer is cleaved in two places: Both cleavage lines run across the [[Specific Process Knowledge/Photolithography/masks/travka/fields/Aline| A-line fields]]. This produces three sites on each wafer where the depth of the trenches can be determined using an SEM. | After etching each wafer is cleaved in two places: Both cleavage lines run across the [[Specific Process Knowledge/Photolithography/masks/travka/fields/Aline| A-line fields]]. This produces three sites on each wafer where the depth of the trenches can be determined using an SEM. | ||
<gallery caption="The results of process B after 17 and 34 cycles of etching" widths="500" heights="350" perrow="2"> | <gallery caption="The results of process B after 17 and 34 cycles of etching" widths="500" heights="350" perrow="2"> | ||