Specific Process Knowledge/Etch/DRIE-Pegasus/processB: Difference between revisions
| Line 93: | Line 93: | ||
=== Results === | === Results === | ||
A number of wafers are patterned with the [[Specific Process Knowledge/Photolithography/masks/travka|travka masks]] in 4 microns of AZ photoresist. The wafers are then | A number of wafers are patterned with the [[Specific Process Knowledge/Photolithography/masks/travka|travka masks]] in 4 microns of AZ photoresist. The wafers are then etched using two different durations of process B in the DRIE-Pegasus. | ||
{| | {| | ||
| Line 162: | Line 161: | ||
|} | |} | ||
|} | |} | ||
After etching each wafer is cleaved in two places: Both cleavage lines run across the [[Specific Process Knowledge/Photolithography/masks/travka/fields/Aline| A-line fields]]. | |||
<gallery caption="The results of process B after 17 and 34 cycles of etching" widths="500" heights="350" perrow="2"> | <gallery caption="The results of process B after 17 and 34 cycles of etching" widths="500" heights="350" perrow="2"> | ||