Specific Process Knowledge/Etch/DRIE-Pegasus/processB: Difference between revisions
Appearance
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|+ '''Wafers''' | |+ '''Wafers''' | ||
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! width=" | ! width="70" |Wafer number | ||
! width=" | ! width="70" |Mask | ||
! width=" | ! width="70" |Process B duration | ||
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|+ '''Wafers''' | |+ '''Wafers''' | ||
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! width=" | ! width="70" |Wafer number | ||
! width=" | ! width="70" |Mask | ||
! width=" | ! width="70" |Process B duration | ||
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<gallery caption="The results of process B after 17 and 34 cycles of etching" widths=" | <gallery caption="The results of process B after 17 and 34 cycles of etching" widths="400" heights="250" perrow="2"> | ||
image:Travkatesting1a.jpg| | image:Travkatesting1a.jpg| | ||
image:Travkatesting1b.jpg|The 60 nm trenches | image:Travkatesting1b.jpg|The 60 nm trenches | ||
</gallery> | </gallery> | ||