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Specific Process Knowledge/Etch/DRIE-Pegasus/processB: Difference between revisions

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A number of wafers are patterned with the [[Specific Process Knowledge/Photolithography/masks/travka|travka masks]] in 4 microns of AZ photoresist. The wafers are then etc
A number of wafers are patterned with the [[Specific Process Knowledge/Photolithography/masks/travka|travka masks]] in 4 microns of AZ photoresist. The wafers are then etc


{| border="2" cellpadding="2" cellspacing="1"
 
{|
| STYLE="vertical-align: top"|
{| border = 1
|+ '''Wafers'''
|-
|-
! Wafer number
! width="50" |Wafer number
! Mask
! width="50" |Mask
! Process B duration
! width="50" |Process B duration
|-
|-
| 2
| 2
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| Travka 20
| Travka 20
| 34 cycles or 6:14 mins
| 34 cycles or 6:14 mins
|}
|+ '''Wafers'''
|-
! width="50" |Wafer number
! width="50" |Mask
! width="50" |Process B duration
|-
|-
| 11
| 11
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| Travka 65
| Travka 65
| 34 cycles or 6:14 mins
| 34 cycles or 6:14 mins
|}
| STYLE="vertical-align: top"|
{| border = 1
{|
| STYLE="vertical-align: top"|
{| border = 1
|+ '''Travka 05: A-line 2 µm to 25 µm fields'''
! width="50" |Trench width (µm)
! width="50" |Ridge width (µm)
! width="50" |Period width (µm)
! width="50" |Total periods
! width="50" |Width of array (µm)
|-
|2||38||40||2||80
|-
|3||57||60||3||180
|-
|4||76||80||2||160
|-
|6||114||120||1||120
|-
|8||152||160||1||160
|-
|10||190||200||1||200
|-
|15||285||300||1||300
|-
|25||475||500||1||500
|}
| STYLE="vertical-align: top"|
{| border = 1
|+ '''Travka 05: A-line 40 µm to 300 µm fields'''
|-
! width="50" |Trench width (µm)
! width="50" |Ridge width (µm)
! width="50" |Period width (µm)
! width="50" |Total periods
! width="50" |Width of array (µm)
|-
|40||760||800||1||800
|-
|50||950||1000||1||1000
|-
|75||1425||1500||1||1500
|-
|100||1900||2000||1||2000
|-
|150||2850||3000||1||3000
|-
|200||3800||4000||1||4000
|-
|300||5700||6000||1||6000
|}
|}
|}