Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
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! colspan="3" align="center"| Multiplexed parameters | ! colspan="3" align="center"| Multiplexed parameters | ||
|- | |- | ||
! Parameter | |||
! Setting | |||
! Parameter | |||
! Etch | |||
! Pass | |||
|- | |- | ||
! Temperature | |||
| 10<sup>o</sup>C | | 10<sup>o</sup>C | ||
! SF<sub>6</sub> Flow | |||
| 230 sccm | | 230 sccm | ||
| 0 sccm | | 0 sccm | ||
|- | |- | ||
! No. of cycles | |||
| 31 | | 31 | ||
! O<sub>2</sub> Flow | |||
| 23 sccm | | 23 sccm | ||
| 0 sccm | | 0 sccm | ||
|- | |- | ||
! Process time | |||
| 5:56 mins | | 5:56 mins | ||
! C<sub>4</sub>F<sub>4</sub> Flow | |||
| 0 sccm | | 0 sccm | ||
| 120 sccm | | 120 sccm | ||
|- | |- | ||
! APC mode | |||
| manual | | manual | ||
! RF coil | |||
| | | 2800 W | ||
| | | 1000 W | ||
|- | |- | ||
! APC setting | |||
| 86.8 % | | 86.8 % | ||
! RF Platen | |||
| | | 16 W | ||
| | | 0 W | ||
|- | |- | ||
|} | |} | ||