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Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy: Difference between revisions

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!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"|Imaging
|style="background:LightGrey; color:black"| Imaging and measurement of
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* leo
* Any (semi)conducting sample that may have thin (> ~ 5 µm) layers of non-conducting materials on top
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* All samples
* Any sample except bulk insulators such as polymers, glass or quartz wafers
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* All samples
* All samples
* Bulk insulators such as polymer-, glass or quartz wafers
* Bulk insulators such as polymer-, glass or quartz wafers
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* Samples from the real world
* Samples from the 'real' world outside the lab
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black" rowspan="2"|Resolution
|style="background:LightGrey; color:black" rowspan="2"|Resolution
|style="background:Whitesmoke; color:black" colspan="4" | The resolution of a SEM is strongly dependent on the type of sample and the skills of the operator. The highest resolution is probably only achieved on special samples
|style="background:Whitesmoke; color:black" colspan="4" align="center"| The resolution of a SEM is strongly dependent on the type of sample and the skills of the operator. The highest resolution is probably only achieved on special samples
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* 20 nm (limited by instrument)
* 20 nm (limited by instrument)
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|style="background:LightGrey; color:black"|Optimum usage
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* Imaging of any
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* zeiss
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* fei
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* jeol
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!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range