Specific Process Knowledge/Characterization/Topographic measurement: Difference between revisions
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|Max. scan range z | |Max. scan range z | ||
| | |<100Å to~0.3mm | ||
|50Å to 262µm | |50Å to 262µm | ||
|1 µm (can go up to 5 µm under special settings) | |1 µm (can go up to 5 µm under special settings) |
Revision as of 11:23, 23 November 2007
Topographic measurements are measurements were you can measure hight differences on your substrate. If you measure in many spots of you substrate you can get a topographic image of your substrate.
AT DANCHIP we have three systems for topographic measurement:
- Tencor - Profiler for measuring micro structures
- Dektak - Profiler for measuring micro structures
- Nanoman - AFM for measuring nano structures
Tencor | Dektak | Nanoman | |
---|---|---|---|
General description | Profiler for measuring micro structures | Profiler for measuring micro structures. Can do wafer mapping | AFM for measuring nanostructures and surface roughness |
Substrate size | 4" | 2" -> 8" | 6" or less |
Max. scan range xy | Line scan x: Full substrate size | Line scan x: 50µm to 200mm | 90 µm square |
Max. scan range z | <100Å to~0.3mm | 50Å to 262µm | 1 µm (can go up to 5 µm under special settings) |
Resolution xy | |||
Resolution z | |||
Min. feature size | |||
Max. aspect ratio | ~1 with standard cantilever. | ||
Tip radius | 5 µm | <12 nm on standard cantilever | |
Stress measurement | Can be done | Can be done | Cannot be done |
Surface roughness | Can be done on a line scan | Can be done on a line scan | Can be done on a selected surface area |