Specific Process Knowledge/Etch/ICP Metal Etcher/silicon: Difference between revisions

Revision as of 14:12, 11 December 2012 view source Jml (talk \| contribs) Bureaucrats, danchip, Administrators 1,918 edits →Silicon etching on the ICP Metal Etcher ← Older edit		Revision as of 14:13, 11 December 2012 view source Jml (talk \| contribs) Bureaucrats, danchip, Administrators 1,918 edits →Silicon etching on the ICP Metal Etcher Newer edit →
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	In the primary silicon etcher at Danchip, the DRIE-Pegasus, silicon is etched using a fluorine based plasma (with SF<sub>6</sub> as etch gas). Silicon is also etched by chlorine and bromine.		In the primary silicon etcher at Danchip, the DRIE-Pegasus, silicon is etched using a fluorine based plasma (with SF<sub>6</sub> as etch gas). Silicon is also etched by chlorine and bromine.

	*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano\|~~Etch~~ of nanostructures in silicon]]		*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano\|Chlorine/Bromine etch of nanostructures in silicon]]