Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano: Difference between revisions
Created page with "=== Etching of nanostructures in silicon === A series of experiments with etching nanostructures in silicon has been carried out. The common process parameters are: ; Substra..." |
|||
| Line 7: | Line 7: | ||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/340nmzep|The 340 nm zep resist profiles (Wafer WF_2C1_feb2011)]] | *[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/340nmzep|The 340 nm zep resist profiles (Wafer WF_2C1_feb2011)]] | ||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/211nmzep|The 211 nm zep resist profiles (Wafer WF_2E02_mar23_2011)]] | *[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/211nmzep|The 211 nm zep resist profiles (Wafer WF_2E02_mar23_2011)]] | ||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/nanoetch/180nmzep|The 180 nm zep resist profiles (Wafer WF_2B1_feb06_2011)]] | |||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/nanoetch/340nmzep|The 340 nm zep resist profiles (Wafer WF_2C1_feb2011)]] | |||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/nanoetch/211nmzep|The 211 nm zep resist profiles (Wafer WF_2E02_mar23_2011)]] | |||
The exposed area is very small. The 211 nm batch has the same lines distributed in a different way that allows you monitor the progress of the etch in three different durations by cleaving off a piece of the wafer 3 times. | The exposed area is very small. The 211 nm batch has the same lines distributed in a different way that allows you monitor the progress of the etch in three different durations by cleaving off a piece of the wafer 3 times. | ||
After E-beam exposure the wafers have been developed: N50 for 2 minutes followed by 30 seconds of IPA. | After E-beam exposure the wafers have been developed: N50 for 2 minutes followed by 30 seconds of IPA. | ||