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Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

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== Recipes on the Metal Etcher ==
== Recipes on the Metal Etcher ==
===Chromium etch===
The Chromium etch has ONLY been carried out on the following substrate stack:
The Chromium is sputter deposited onto a 2" quartz wafer and pattered by e-beam with Zep520A resist.
This 2" QZ wafer is bonded with crystal bond to a 65mmx65mm quartz plate with the thickness: 6.35mm.
This QZ plate is bonded to a Si wafer.
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Cr etch'''
|-
! Parameter
|'''Cr etch'''
|-
! Cl<sub>2</sub> (sccm)
| 65
|-
! O<sub>2</sub> (sccm)
| 15
|-
! Pressure (mTorr)
| 15
|-
! Coil power (W)
| 300
|-
! Platen power (W)
| 15
|-
! Temperature (<sup>o</sup>C)
| 50 (no back side cooling)
|-
! Spacers (mm)
| 100
|-
! Etch rate (nm/min)
| ~14
|-
!Zep520A resist selectivity
| ~0.9
|-
!Comment
| .
|}


=== Etching of nanostructures in silicon ===
=== Etching of nanostructures in silicon ===