Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Si etch: Difference between revisions

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 The table list the best etch definition obtained. The IBE etcher should only be used for silicon etching, if you have a specific need that cannot be accommodated in a RIE tool. This could be excessive amount of metals on the surface or a layer of silicon in a stack of several layers that all must be etched.
 The corner definition is strongly dependent on both accelerator and beam voltage and of course the incident angle. However, no interactions between parameters seem to influence the angle outcome. The good corner definition will introduce hare ears at the resist edge. Which is best limited by use of thin resist layers slightly thicker than needed to mask for the duration of the etch. Be aware that the selectivity between silicon and resist is poor.
+===Contour plots of etch rate and corner angle===
+{| border="1" cellspacing="1" cellpadding="2"
+!
+[[image:Silicon-IBE-good-b17.jpg|300x300px|thumb|center|Silicon etch in IBE with good corner definition. Small hare ears are obvious at the structure edge.]]
+!
+[[image:Silicon-IBE-bad-b21.jpg|300x300px|thumb|center|Silicon etch in IBE with rounded corners. Large hare ears with ripling are seen at the structure edge.]]
+|}