Revision as of 14:33, 25 March 2013

BCB Curing Oven

The BCB Curing Oven is mainly used for curing of BCB (bisbenzocyclobutene) and for alloying of metals in a nitrogen atmosphere.

During processing the furnace is rapidly heated by use of eight halogen lamps situated below the sample. The furnace is purged with a high or a low nitrogen flow. Samples are processed at atmospheric pressure or at vacuum.

The user manual, user APV, technical information and contact information can be found in LabManager:

BCB Curing Oven

Process information

Here are some of the standard processes used in the BCB Curing Oven.

BCB curing:

The AL/BL processes are (should be) identical except for a (2x) pump/purge cycle in the beginning of the BL processes.

Long curing at 210°C: BCB210AL.PDF/Media:BCB210BL.PDF
Long curing at 250°C: BCB250AL.PDF/Media:BCB250BL.PDF

General processes

There are a number of general processes named DxxxCyyy.PDF.

The Dxxx is the set temperature (in °C) and the Cyyy is the time (in minutes) at the set temperature.

The oven heats to the set temperature (xxx) in 5 mins and then stays at the temperature (xxx) for a time (yyy) after which it cools to romm temperature as fast as possible.

The program sequence looks like this for the file D200C060.PDF:


stored 31.08.2011 at 18: 15:47

{P0} 00,05:00,0200,H - - 2 - - - - -,075,250,001,005,028 01,60:00,0200,H C 1 - - - - - - 02,05:00,0002,- C 1 - - - - - - 03,00:00,0000,- C - - - - - - -

Equipment performance and process related parameters

Equipment		BCB Curing Oven
Purpose		BCB curing Metal alloying
Process parameter range	Temperature	22 - 450^oC
	Nitrogen flows	Low N₂ flow: 5 SLM High N₂ flow: Max 16.7 SLM
	Pressure	Atmospheric pressure or vacuum
Substrates (Remember to use the right carrier wafer)	Batch size	Several small samples One 50 mm wafer One 100 mm wafer
	Allowed materials	BCB III-V materials Co-polymer Silicon, silicon oxide, silicon nitride Quartz Resist (prebaked) Metal (only Al, Ni, Ge and Au)