Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon: Difference between revisions
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==Overview of the performance of the LPCVD polysilicon processes and some process related parameters== | ==Overview of the performance of the LPCVD polysilicon processes and some process related parameters== | ||
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!style="background:silver; color:black;" align=" | !style="background:silver; color:black;" align="center"|Purpose | ||
|style="background:LightGrey; color:black"|Deposition of LPCVD polysilicon | |style="background:LightGrey; color:black"|Deposition of LPCVD polysilicon | ||
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*Phosphorus doped polySi | *Phosphorus doped polySi | ||
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!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
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*Good uniformity over the wafer | *Good uniformity over the wafer | ||
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!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
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The silane (SiH<sub>4</sub>) flow depends on the actual process | The silane (SiH<sub>4</sub>) flow depends on the actual process | ||
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!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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