Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions
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==D1 | ==Apox furnace (D1)== | ||
[[Image:APOX.JPG|thumb|300x300px|D1 Furnace Apox: positioned in cleanroom ?]] | [[Image:APOX.JPG|thumb|300x300px|D1 Furnace Apox: positioned in cleanroom ?]] | ||
D1 | The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated production of apox wafers which is a very thick thermal oxide grown at 1150 <sup>o</sup>C. Running a batch of apox wafers (oxide>5µm) can take several weeks. | ||
This furnace is positioned in III-V cleanroom. The furnaces are the cleanest process chambers in the cleanroom. Only new wafers from the box enters this furnace. | This furnace is positioned in III-V cleanroom. The furnaces are the cleanest process chambers in the cleanroom. Only new wafers from the box enters this furnace. | ||