Specific Process Knowledge/Thermal Process: Difference between revisions
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== Choose an equipment to use == | == Choose an equipment to use == | ||
*[[/A1 Bor Drive-in furnace|A1 Bor Drive-in furnace]] - ''For oxidation of Si wafers and for drive-in after boron pre-dep'' | *[[/A1 Bor Drive-in furnace|A1 Bor Drive-in furnace]] - ''For oxidation and annealing of Si wafers and for drive-in after boron pre-dep'' | ||
*[[/A2 Bor Pre-dep furnace|A2 Bor Pre-dep furnace]] - ''For pre-deposition (doping) of boron on Si wafers'' | *[[/A2 Bor Pre-dep furnace|A2 Bor Pre-dep furnace]] - ''For pre-deposition (doping) of boron on Si wafers'' | ||
*[[/A3 Phosphor Drive-in furnace|A3 Phosphor Drive-in furnace]] - ''For oxidation of | *[[/A3 Phosphor Drive-in furnace|A3 Phosphor Drive-in furnace]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep'' | ||
*[[/A4 Phosphor Pre-dep furnace|A4 Phosphor Pre-dep furnace]] - '' | *[[/A4 Phosphor Pre-dep furnace|A4 Phosphor Pre-dep furnace]] - ''For pre-deposition (doping) of phosphorus on Si wafers'' | ||
*[[/C1 Furnace Anneal-oxide|C1 Furnace Anneal-oxide]] - ''For oxidation and annealing | *[[/C1 Furnace Anneal-oxide|C1 Furnace Anneal-oxide]] - ''For oxidation and annealing of 100 mm and 150 mm wafers'' | ||
*[[/C2 Gate Oxide furnace|C2 Gate Oxide furnace]] - ''For growing | *[[/C2 Gate Oxide furnace|C2 Gate Oxide furnace]] - ''For gate oxide growing on new wafers'' | ||
*[[/C3 Anneal-bond furnace|C3 Anneal-bond furnace]] - ''For | *[[/C3 Anneal-bond furnace|C3 Anneal-bond furnace]] - ''For oxidation and annealing of bonded wafers'' | ||
*[[/C4 Aluminium Anneal furnace|C4 Aluminium Anneal furnace]] - ''For oxidation and annealing of wafers containing | *[[/C4 Aluminium Anneal furnace|C4 Aluminium Anneal furnace]] - ''For oxidation and annealing of wafers containing aluminium'' | ||
*[[/Furnace Noble|Furnace Noble]] - ''For non-clean | *[[/Furnace Noble|Furnace Noble]] - ''For annealing and oxidation of non-clean wafers'' | ||
*[[/Furnace APOX|Furnace APOX]] - '' | *[[/Furnace APOX|Furnace APOX]] - ''For growing of very thick oxide layers'' | ||
*[[/Jipelec RTP|Jipelec RTP]] - ''For | *[[/Jipelec RTP|Jipelec RTP]] - ''For rapid thermal annealing of III-V materials and Si based materials'' | ||
*[[/BCB Curing Oven|BCB Curing Oven]] - '' | *[[/BCB Curing Oven|BCB Curing Oven]] - ''For resist curing and metal alloying'' | ||
*[[/Resist Pyrolysis Furnace|Resist Pyrolysis Furnace]] - ''For pyrolysis of different resist layers'' | *[[/Resist Pyrolysis Furnace|Resist Pyrolysis Furnace]] - ''For pyrolysis of different resist layers'' | ||
Revision as of 11:06, 3 December 2012
Choose a process type
- Oxidation - grow a thermal oxide
- Annealing
- Dope with Boron
- Dope with Phosphorus
Choose an equipment to use
- A1 Bor Drive-in furnace - For oxidation and annealing of Si wafers and for drive-in after boron pre-dep
- A2 Bor Pre-dep furnace - For pre-deposition (doping) of boron on Si wafers
- A3 Phosphor Drive-in furnace - For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep
- A4 Phosphor Pre-dep furnace - For pre-deposition (doping) of phosphorus on Si wafers
- C1 Furnace Anneal-oxide - For oxidation and annealing of 100 mm and 150 mm wafers
- C2 Gate Oxide furnace - For gate oxide growing on new wafers
- C3 Anneal-bond furnace - For oxidation and annealing of bonded wafers
- C4 Aluminium Anneal furnace - For oxidation and annealing of wafers containing aluminium
- Furnace Noble - For annealing and oxidation of non-clean wafers
- Furnace APOX - For growing of very thick oxide layers
- Jipelec RTP - For rapid thermal annealing of III-V materials and Si based materials
- BCB Curing Oven - For resist curing and metal alloying
- Resist Pyrolysis Furnace - For pyrolysis of different resist layers