Specific Process Knowledge/Thermal Process/BCB Curing Oven: Difference between revisions
Line 26: | Line 26: | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*BCB curing | *BCB curing | ||
*Metal alloying | |||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan=" | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Temperature | |style="background:LightGrey; color:black"|Temperature | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
Line 37: | Line 38: | ||
*Low N<sub>2</sub> flow: 5 SLM | *Low N<sub>2</sub> flow: 5 SLM | ||
*High N<sub>2</sub> flow: Max 16.7 SLM | *High N<sub>2</sub> flow: Max 16.7 SLM | ||
|- | |||
|style="background:LightGrey; color:black"|Pressure | |||
|style="background:WhiteSmoke; color:black"| | |||
*Atmospheric pressure or vacuum | |||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||
(Remember to use the right carrier wafer) | |||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Several small samples | *Several small samples | ||
*One 50 mm wafer | *One 50 mm wafer | ||
*One 100 mm wafer | *One 100 mm wafer | ||
|- | |- | ||
| style="background:LightGrey; color:black"|Allowed materials | | style="background:LightGrey; color:black"|Allowed materials | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*BCB | *BCB |
Revision as of 10:03, 3 December 2012
BCB Curing Oven
The BCB Curing Oven is mainly used for curing of BCB (bisbenzocyclobutene) and for alloying of metals in a nitrogen atmosphere.
During processing the furnace is rapidly heated by use of five halogen lamps situated below the sample. The furnace is purged with a high or a low nitrogen flow. Samples are processed at atmospheric pressure or at vacuum.
The user manual, user APV, technical information and contact information can be found in LabManager:
Process information
There are no standard processes on the furnace.
Equipment | BCB Curing Oven | |
---|---|---|
Purpose |
| |
Process parameter range | Temperature |
|
Nitrogen flows |
| |
Pressure |
| |
Substrates
(Remember to use the right carrier wafer) |
Batch size |
|
Allowed materials |
|