Specific Process Knowledge/Thermal Process/BCB Curing Oven: Difference between revisions

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*BCB curing and metal alloying
*BCB curing
*Metal alloying
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Temperature
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*Low N<sub>2</sub> flow: 5 SLM
*Low N<sub>2</sub> flow: 5 SLM
*High N<sub>2</sub> flow: Max 16.7 SLM
*High N<sub>2</sub> flow: Max 16.7 SLM
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*Atmospheric pressure or vacuum
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
(Remember to use the right carrier wafer)
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*Several small samples (placed on a carrier wafer)
*Several small samples  
*One 50 mm wafer (placed on a carrier wafers)
*One 50 mm wafer  
*One 100 mm wafer
*One 100 mm wafer
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| style="background:LightGrey; color:black"|Allowed materials  
| style="background:LightGrey; color:black"|Allowed materials  
'''Use the right carrier wafer'''
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*BCB
*BCB

Revision as of 10:03, 3 December 2012

BCB Curing Oven

The BCB Curing Oven is mainly used for curing of BCB (bisbenzocyclobutene) and for alloying of metals in a nitrogen atmosphere.

During processing the furnace is rapidly heated by use of five halogen lamps situated below the sample. The furnace is purged with a high or a low nitrogen flow. Samples are processed at atmospheric pressure or at vacuum.

The user manual, user APV, technical information and contact information can be found in LabManager:

The BCB Curing Oven. Located in the III-V Lab

BCB Curing Oven

Process information

There are no standard processes on the furnace.

Equipment performance and process related parameters

Equipment BCB Curing Oven
Purpose
  • BCB curing
  • Metal alloying
Process parameter range Temperature
  • 0 - 450oC
Nitrogen flows
  • Low N2 flow: 5 SLM
  • High N2 flow: Max 16.7 SLM
Pressure
  • Atmospheric pressure or vacuum
Substrates

(Remember to use the right carrier wafer)

Batch size
  • Several small samples
  • One 50 mm wafer
  • One 100 mm wafer
Allowed materials
  • BCB
  • III-V materials
  • Co-polymer
  • Silicon, silicon oxide, silicon nitride
  • Quartz
  • Resist (prebaked)
  • Metal (only Al, Ni, Ge and Au)