Specific Process Knowledge/Thermal Process/BCB Curing Oven: Difference between revisions

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BCB Curing Oven

The BCB Curing Oven is mainly used for curing of BCB (bisbenzocyclobutene) and for alloying of metal in a nitrogen atmosphere.

During processing the furnace is rapidly heated by use of five halogen lamps below the sample. The furnace is purged with a high or a low nitrogen flow. Samples are processed at atmospheric pressure or at vacuum

The user manual, user APV, technical information and contact information can be found in LabManager:

BCB Curing Oven

Process information

There are no standard processes on the furnace.

Equipment performance and process related parameters

Equipment		BCB Curing Oven
Purpose		BCB curing and metal alloying
Process parameter range	Temperature	0 - 450^oC
Process parameter range	Nitrogen flows	Low N₂ flow: 5 SLM High N₂ flow: Max 16.7 SLM
Substrates	Batch size	Several small samples (placed on a carrier wafer) One 50 mm wafer (placed on a carrier wafers) One 100 mm wafer
	Allowed materials Use the right carrier wafer	BCB III-V materials Co-polymer Silicon, silicon oxide, silicon nitride Quartz Resist (prebaked) Metal (only Al, Ni, Ge and Au)

@@ Line 22: / Line 22: @@
 !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
-|style="background:WhiteSmoke; color:black"|<b>Resist Pyrolysis Furnace</b>
+|style="background:WhiteSmoke; color:black"|<b>BCB Curing Oven</b>
 |-
 !style="background:silver; color:black;" align="center"|Purpose
@@ Line 46: / Line 46: @@
 *One 100 mm wafer
 |-
 | style="background:LightGrey; color:black"|Allowed materials
+'''Use the right carrier wafer'''
 |style="background:WhiteSmoke; color:black"|
 *BCB
+*III-V materials
 *Co-polymer
-*Silicon
+*Silicon, silicon oxide, silicon nitride
-*Silicon oxide
-*Silicon nitride
 *Quartz
 *Resist (prebaked)
-*III-V materials
+*Metal (only Al, Ni, Ge and Au)
-*Metal (only with carrier wafer)
 |-
 |}