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Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy: Difference between revisions

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|style="background:LightGrey; color:black"|Resolution
|style="background:LightGrey; color:black"|Resolution
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* leo
* ~ 5 nanometers (limited by vibrations)
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* zeiss
* 1-2 nm (limited by vibrations)
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* fei
* 1-2 nm (limited by vibrations)
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* jeol
* 20 nm (limited by instrument)
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|style="background:LightGrey; color:black"|Optimum usage
|style="background:LightGrey; color:black"|Optimum usage
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* leo
* Imaging of any
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* zeiss
* zeiss
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* jeol
* jeol
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range
|style="background:LightGrey; color:black"|Detectors
|style="background:LightGrey; color:black"|Detectors
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* Tungsten filament
* Tungsten filament
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|style="background:LightGrey; color:black"|Operating pressures
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* High vacuum (2*10<sup>-5</sup>mbar - 10<sup>-6</sup>mbar)
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* High vacuum (2*10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar)
* Low vacuum (0.1 mbar-2 mbar)
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* High vacuum (2*10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar)
* Low vacuum (0.1 mbar-2 mbar)
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* High vacuum
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Sample sizes
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*1 4" wafer
* Leo
*1 2" wafer (use Al carrier with Si dummy wafer)
*Several smaller samples (use Al carrier with Si dummy wafer)
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*1 4" wafer (use Al carrier with Si dummy wafer)
* Zeiss
*1 2" wafer (use Al carrier with Si dummy wafer)
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*1 6" wafer (requires 6" setup)
* Fei
*Several smaller samples (use Al carrier with Si dummy wafer)
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* Leo
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| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
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*Silicon
* Leo 
*Silicon oxide (with boron, phosphorous and germanium)
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*Silicon nitrides (with boron, phosphorous and germanium)
* Zeiss
*Pure quartz, fused silica (not Pyrex, Tempax and other glasses)
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*Resists: AZ resists, e-beam resists, SU8, DUV resists
* FEI
*Aluminium as thin film layer on your sample
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*Silicon
* Jeol
*Silicon oxide (with boron, phosphorous and germanium)
*Silicon nitrides (with boron, phosphorous and germanium)
*Pure quartz, fused silica (not Pyrex, Tempax and other glasses)
*Resists: AZ resists, e-beam resists, SU8, DUV resists
*Other olymers (ask the Plasma group for permission)
*Aluminium as thin film layer on your sample
*Other metals (<5% coverage of the wafer)
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