Jump to content

Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy: Difference between revisions

Jml (talk | contribs)
Jml (talk | contribs)
Line 38: Line 38:
|style="background:LightGrey; color:black"|Imaging
|style="background:LightGrey; color:black"|Imaging
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* Any conducting/semiconducting material
* leo
* Thin layers (below some 10 microns) of insulators
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* All samples
* All samples
Line 59: Line 58:
* jeol
* jeol
|-
|-
|style="background:LightGrey; color:black"|Anisotropy
|style="background:LightGrey; color:black"|Optimum usage
|style="background:WhiteSmoke; color:black"|
* leo
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Can vary from isotropic to anisotropic with vertical
* zeiss
:sidewalls and on to a physical etch where the sidewalls
:are angled but without etching under the mask.
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Can vary from isotropic to anisotropic with vertical
* fei
:sidewalls and on to a physical etch where the sidewalls
|style="background:WhiteSmoke; color:black"|
:are angled but without etching under the mask.
* jeol
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range