Specific Process Knowledge/Thermal Process/Resist Pyrolysis Furnace: Difference between revisions

From LabAdviser
Newer edit →
VisualWikitext
Created page with " ==This page is under constrution== == Resist Pyrolysis Furnace == The Resist Pyrolysis Furnace is used for resist pyrolysis, where samples with different resist layers are..."
 
No edit summary
Line 6: Line 6:


The Resist Pyrolysis Furnace is used for resist pyrolysis, where samples with different resist layers are heated up to maximum 1000°C in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample.
The Resist Pyrolysis Furnace is used for resist pyrolysis, where samples with different resist layers are heated up to maximum 1000°C in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample.
If oxygen from the air or from outgassing of the resist is present in the furnace, the resist layer will be removed. Thus, for each process it is important to include a step with a high nitrogen flow at a lower temperature, before a high temperature for resist pyrolysis is obtained. Pyrolysis of a large amount of resist may also be a problem due to resist outgassing.
During processing the furnace is rapidly heated by use of six long heating lamps situated around the furnace tube, andt cooling is done (rather slowly) by use of cooling fans. The furnace is purged with a controlable nitrogen flow. There is no vacuum on the furnace.


'''The user manual, user APV, technical information and contact information can be found in LabManager:'''
'''The user manual, user APV, technical information and contact information can be found in LabManager:'''


[[image:Cluster1.jpg|200x200px|right|thumb|Image(s) of the equipment(s)]]
[[image:Resist_Pyrolysis_Furnace.jpg|400x400px|right|thumb|The Resist Pyrolysis furnace. Located in the III-V Lab]]


[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=294 Resist Pyrolysis Furnace]
[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=294 Resist Pyrolysis Furnace]
Line 15: Line 19:
== Process information ==
== Process information ==


 
There are no standard processes on the furnace.  
 
 
 
Link to process pages - e.g. one page for each material
 
Example:
*[[Specific Process Knowledge/Etch/Etching of Silicon/Si etch using RIE1 or RIE2|Etch of silicon using RIE]]
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using RIE1 or RIE2|Etch of silicon oxide using RIE]]
*[[Specific Process Knowledge/Etch/Etching of Silicon Nitride/Etch of Silicon Nitride using RIE|Etch of silicon nitride using RIE]]
*[[Specific Process Knowledge/Etch/Etching of Polymer/Etch of Photo Resist using RIE|Etch of photo resist using RIE]]


==Equipment performance and process related parameters==
==Equipment performance and process related parameters==
Line 31: Line 25:
{| border="2" cellspacing="0" cellpadding="2"  
{| border="2" cellspacing="0" cellpadding="2"  


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Resist Pyrolysis Furnace
|style="background:WhiteSmoke; color:black"|<b>Equipment 1</b>
|style="background:WhiteSmoke; color:black"|<b>Equipment 1</b>
|style="background:WhiteSmoke; color:black"|<b>Equipment 2</b>
|-
|-
!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|  
|style="background:LightGrey; color:black"|  
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Purpose 1
*Pyrolysis of different resist layers to form conductive structures
*Purpose 2
|style="background:WhiteSmoke; color:black"|
*Purpose 1
*Purpose 2
*Purpose 3
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Response 1
|style="background:WhiteSmoke; color:black"|
*Performance range 1
*Performance range 2
|style="background:WhiteSmoke; color:black"|
*Performance range 1
*Performance range 2
*Performance range 3
|-
|style="background:LightGrey; color:black"|Response 2
|style="background:WhiteSmoke; color:black"|
*Performance range
|style="background:WhiteSmoke; color:black"|
*Performance range
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Parameter 1
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
*Range
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
*0-1000 C
*Temperature ramp-up rate: Max 10 C/min
*Temperature ramp-down rate: Relative slow (depending on the furnace temperature)
|-
|-
|style="background:LightGrey; color:black"|Parameter 2
|style="background:LightGrey; color:black"|Nitrogen flows
|style="background:WhiteSmoke; color:black"|
*Range
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
*Flow 1: Max 660 liter/hour
*Flow 2: Max 3500 liter/hour
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
Line 81: Line 52:
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
Line 91: Line 57:
*Allowed material 1  
*Allowed material 1  
*Allowed material 2
*Allowed material 2
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Allowed material 2
*Allowed material 3
|-  
|-  
|}
|}

Revision as of 14:25, 30 November 2012

This page is under constrution

Resist Pyrolysis Furnace

The Resist Pyrolysis Furnace is used for resist pyrolysis, where samples with different resist layers are heated up to maximum 1000°C in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample.

If oxygen from the air or from outgassing of the resist is present in the furnace, the resist layer will be removed. Thus, for each process it is important to include a step with a high nitrogen flow at a lower temperature, before a high temperature for resist pyrolysis is obtained. Pyrolysis of a large amount of resist may also be a problem due to resist outgassing.

During processing the furnace is rapidly heated by use of six long heating lamps situated around the furnace tube, andt cooling is done (rather slowly) by use of cooling fans. The furnace is purged with a controlable nitrogen flow. There is no vacuum on the furnace.

The user manual, user APV, technical information and contact information can be found in LabManager:

The Resist Pyrolysis furnace. Located in the III-V Lab

Resist Pyrolysis Furnace

Process information

There are no standard processes on the furnace.

Equipment performance and process related parameters

Resist Pyrolysis Furnace Equipment 1
Purpose
  • Pyrolysis of different resist layers to form conductive structures
Process parameter range Temperature
  • 0-1000 C
  • Temperature ramp-up rate: Max 10 C/min
  • Temperature ramp-down rate: Relative slow (depending on the furnace temperature)
Nitrogen flows
  • Flow 1: Max 660 liter/hour
  • Flow 2: Max 3500 liter/hour
Substrates Batch size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/Resist_Pyrolysis_Furnace&oldid=7636"