Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions

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 ! Sputter technique [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon oxide in PVD co-sputter/evaporation|(PVD co-sputter/evaporation tool)]]
 !Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
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 | Stoichiometry
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 | Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used)
 |Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used
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 |Film thickness
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 *~10nm - ~1µm(>2h)
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 |Process Temperature
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 *Expected to be below 100<sup>o</sup>C
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 |Step coverage
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 *
 |Not Known
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 |Film quality
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 *
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 |Batch size
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 *1 200mm wafer
 *Smaller pieces can be mounted with capton tape
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 | Substrate material allowed
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