Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions

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==A1 Bor Drive-in furnace==
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace click here]'''
 
==Boron Drive-in furnace (A1)==
[[Image:A1.JPG|thumb|300x300px|A1 Bor Drive-in furnace. Positioned in cleanroom 2]]
[[Image:A1.JPG|thumb|300x300px|A1 Bor Drive-in furnace. Positioned in cleanroom 2]]


The A1 Bor Drive-in furnane is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a pre-deposition and oxidation of the boron phase layer. Boron pre-deposition takes place in the A2 Bor Pre-dep furnace. The Bor Drive-in furnace can also be used for drive-in of boron which has been ion implanted.  
The Boron Drive-in furnane (A1) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a pre-deposition and oxidation of the boron phase layer. Boron pre-deposition takes place in the Boron Predep furnace (A2). The Boron Drive-in furnace can also be used for drive-in of boron which has been ion implanted.  


A1 is the top furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with the C2 Gate Oxide furnace are the cleanest of all furnaces in the cleanroom. Please be aware of which substrates that are allowed to enter this furnace. Check [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart].  
The Boron Drive-in furnace is the top furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with the Gate Oxide furnace (C1) are the cleanest of all furnaces in the cleanroom. Please be aware of which substrates that are allowed to enter this furnace. Check [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart].  


'''The user manual, quality control procedure and results, technical information and contact information can be found in LabManager:'''
'''The user manual, quality control procedure and results, technical information and contact information can be found in LabManager:'''


'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=47 A1 Furnace: Bor Drive-in]'''
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=47 Boron Drive-in furnace (A1)]'''


==Process knowledge==
==Process knowledge==

Revision as of 14:00, 14 February 2013

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Boron Drive-in furnace (A1)

A1 Bor Drive-in furnace. Positioned in cleanroom 2

The Boron Drive-in furnane (A1) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a pre-deposition and oxidation of the boron phase layer. Boron pre-deposition takes place in the Boron Predep furnace (A2). The Boron Drive-in furnace can also be used for drive-in of boron which has been ion implanted.

The Boron Drive-in furnace is the top furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with the Gate Oxide furnace (C1) are the cleanest of all furnaces in the cleanroom. Please be aware of which substrates that are allowed to enter this furnace. Check the cross contamination chart.

The user manual, quality control procedure and results, technical information and contact information can be found in LabManager:

Boron Drive-in furnace (A1)

Process knowledge


Overview of the performance of the boron drive-in furnace and some process related parameters

Purpose
  • Drive-in of boron
  • Oxidation of silicon
  • Oxidation of boron phase layer
  • Annealing of the oxide
 Oxidation:
  • Dry
  • Wet: with torch (H2+O2)
Performance Film thickness
  • Dry SiO2: 50 Å to ~2000 Å (takes too long to make it thicker)
  • Wet SiO2: 50 Å to ~3 µm (takes too long to make it thicker)
Process parameter range Process Temperature
  • 800-1150 oC
Process pressure
  • 1 atm
Gasses on the system
  • O2, H2 and N2
Substrates Batch size
  • 1-30 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new or RCA cleaned wafers)
  • From A2 furnace directly (e.g. incl. Predep HF)
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