Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

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==C4 Aluminium Anneal furnace==
==C4 Aluminium Anneal furnace==
[[Image:C4helstak.jpg |thumb|300x300px|C4 Furnace Aluminium Anneal: positioned in cleanroom 2]]
[[Image:C4helstak.jpg |thumb|300x300px|C4 Aluminium Anneal furnace. Positioned in cleanroom 2]]


The C4 Aluminium Anneal furnace is a Tempress horizontal furnace for annealing of silicon wafers with aluminium.
The C4 Aluminium Anneal furnace is a Tempress horizontal furnace for annealing of silicon wafers with aluminium.


This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to enter wafers that contains aluminium. Check the [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 cross contamination chart].  
This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to enter wafers that contain aluminium. Check the [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 cross contamination chart].  


'''The user manual, technical information and contact information can be found in LabManager:'''
'''The user manual, technical information and contact information can be found in LabManager:'''

Revision as of 12:12, 30 November 2012

C4 Aluminium Anneal furnace

C4 Aluminium Anneal furnace. Positioned in cleanroom 2

The C4 Aluminium Anneal furnace is a Tempress horizontal furnace for annealing of silicon wafers with aluminium.

This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to enter wafers that contain aluminium. Check the cross contamination chart.

The user manual, technical information and contact information can be found in LabManager:

Furnace C4: Aluminium Anneal

Process knowledge

Overview of the performance of Aluminium Anneal furnace and some process related parameters

Purpose Annealing Annealing of wafers containing aluminium.
Performance Film thickness
Process parameter range Process Temperature
  • 400-500 oC
Process pressure
  • 1 atm
Gas flows
  • N2: 5 sccm
  • O2: 5 sccm
Substrates Batch size
  • 1-30 4" wafer (or 2" wafers)
Substrate material allowed

Silicon wafers with alluminium. Wafers are allowed after alluminium lift off or after alluminium etch and resiststrip in acetone

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