Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions
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!style="background:silver; color:black;" align="center"|Purpose | !style="background:silver; color:black;" align="center"|Purpose | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| Dry etch of | ||
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* | * Silicon | ||
* | * Barc | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Etch rates | ||
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* | * Standard processes A and B up to 15 µm/min | ||
* | * | ||
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|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Uniformity | ||
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*Performance range | *Performance range | ||