Specific Process Knowledge/Characterization/Four-Point Probe: Difference between revisions

Revision as of 10:46, 29 November 2012

Four-Point Probe

The Four-Point Probe is a Veeco FPP-5000 for I/V measurement. The main purpose it to measure resistance and resistivity on a 4" silicon wafer. But can also be used to find thickness of thin layers or test if is a N- or P-type wafer.

The wafer are pushed down on the four pins so a measurement is performed. It works only for 4" wafers because a special holder is need.

The user manual,technical information and contact information can be found in LabManager:

Four point probe

Overview of the performance of the boron pre-dep furnace and some process related parameters

Purpose	Doping of boron
Performance		Look at the process knowlege
Process parameter range	Process Temperature	900-1150 ^oC
	Process pressure	1 atm
	Gasses on the system	Ar, N₂
Substrates	Batch size	1-30 4" wafer (or 2" wafers) per run
Substrates	Substrate material allowed	Silicon wafers (new from the box or RCA cleaned) In doubt: look at the cross contamination chart or send a mail to the Furnace group.

@@ Line 9: / Line 9: @@
 '''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=163 Four point probe]'''
+==Overview of the performance of the boron pre-dep furnace and some process related parameters==
+{| border="2" cellspacing="0" cellpadding="0"
+|-
+!style="background:silver; color:black;" align="center"|Purpose
+|style="background:LightGrey; color:black"|Doping of boron
+|style="background:WhiteSmoke; color:black"|
+|-
+!style="background:silver; color:black" align="center"|Performance
+|style="background:LightGrey; color:black"|
+|style="background:WhiteSmoke; color:black"|
+Look at the process knowlege
+|-
+!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
+|style="background:LightGrey; color:black"|Process Temperature
+|style="background:WhiteSmoke; color:black"|
+*900-1150 <sup>o</sup>C
+|-
+|style="background:LightGrey; color:black"|Process pressure
+|style="background:WhiteSmoke; color:black"|
+*1 atm
+|-
+|style="background:LightGrey; color:black"|Gasses on the system
+|style="background:WhiteSmoke; color:black"|
+*Ar, N<sub>2</sub>
+|-
+!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
+|style="background:LightGrey; color:black"|Batch size
+|style="background:WhiteSmoke; color:black"|
+*1-30 4" wafer (or 2" wafers) per run
+|-
+| style="background:LightGrey; color:black"|Substrate material allowed
+|style="background:WhiteSmoke; color:black"|
+*Silicon wafers (new from the box or RCA cleaned)
+*In doubt: look at [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group].
+|-
+|}